Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

Measuring the roughness of buried interfaces by sputter depth profiling.

We report results of high-resolution sputter depth profiling of an alternating MgO/ZnO nanolayer stack grown by atomic layer deposition (ALD) of ≈5.5 nm per layer. We used an improved dual beam time-of-flight secondary ion mass spectrometer to measure (24)Mg(+) and (64)Zn(+) intensities as a function of sample depth. Analysis of depth profiles by the mixing-roughness-information model yields a ...

Sputter Depth Profiling by SIMS; Calibration of SIMS Depth Scale Using Multi-layer Reference Materials

In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...

Retrospective sputter depth profiling using 3D mass spectral imaging.

A molecular multilayer stack composed of alternating Langmuir-Blodgett films was analyzed by ToF-SIMS imaging in combination with intermediate sputter erosion using a focused C60+ cluster ion beam. From the resulting dataset, depth profiles of any desired lateral portion of the analyzed field-of-view can be extracted in retrospect, allowing the influence of the gating area on the apparent depth...

Cathodoluminescence depth profiling of ion-implanted GaN

Molecular depth profiling with cluster ion beams.

Peptide-doped trehalose thin films have been characterized by bombardment with energetic cluster ion beams of C60+ and Aux+ (x = 1, 2, 3). The aim of these studies is to acquire information about the molecular sputtering process of the peptide and trehalose by measurement of secondary ion mass spectra during erosion. This system is important since uniform thin films of approximately 300 nm thic...